2N4416A [Linear Systems]
N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER; N沟道JFET高频放大器
| 型号： | 2N4416A |
| 厂家： | 
Linear Systems |
| 描述： | N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER |
| 文件： | 总2页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N/SST4416 2N4416A
N-CHANNEL JFET
HIGH FREQUENCY AMPLIFIER
Linear Integrated Systems
FEATURES
Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A
VERY LOW NOISE FIGURE (400 MHz)
EXCEPTIONAL GAIN (400 MHz)
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
4 dB (max)
10 dB (min)
2N SERIES
2N SERIES* SST SERIES
TO-72
TO-92
SOT-23
BOTTOM VIEW
BOTTOM VIEW
TOP VIEW
1
3
2
D
S
D
S
2
1
3
4
G
C
Storage Temperature
-65 to +200 °C
-55 to +135 °C
S
1
D G
G
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
2 3
300mW
10mA
Gate Current
Maximum Voltages
*Optional Package For 2N4416
Gate to Drain or Gate to Source LS4416
Gate to Drain or Gate to Source LS4416A
-30V
-35V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
2N/SST4416
2N4416A
2N/SST4416
2N4416A
-30
-35
Gate to Source
BVGSS
IG = -1µA, VDS = 0V
Breakdown Voltage
V
-6
-6
15
-0.1
-1.0
7500
50
0.8
4
Gate to Source
Cutoff Voltage
VGS(off)
IDSS
VDS = 15V, ID = 1nA
-2.5
5
Gate to Source Saturation Current
mA
nA
VDS = 15V, VGS = 0V
VGS = -20V, VDS = 0V
VGS = -15V, VDS = 0V
2N
SST
IGSS
Gate Leakage Current
gfs
gos
Ciss
Crss
Coss
en
Forward Transconductance
Output Conductance
4500
µS
pF
VDS = 15V, VGS = 0V, f = 1kHz
Input Capacitance2
Reverse Transfer Capacitance2
Output Capacitance2
Equivalent Input Noise Voltage
VDS = 15V, VGS = 0V, f = 1MHz
2
6
nV/√Hz VDS = 10V, VGS = 0V, f = 1kHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
100 MHz
MIN MAX MIN MAX
400 MHz
SYMBOL
CHARACTERISTIC
UNITS CONDITIONS
giss
biss
goss
boss
Gfs
Input Conductance
Input Susceptance2
Output Conductance
Output Susceptance2
Forward Transconductance
Power Gain2
100
2500
75
1000
10000
100
µS
dB
VDS = 15V, VGS = 0V
1000
4000
4000
10
Gps
NF
18
VDS = 15V, ID = 5mA
VDS = 15V, ID = 5mA, RG = 1kΩ
Noise Figure2
2
4
TO-72
TO-92
SOT-23
Four Lead
0.175
0.195
0.130
0.155
0.89
1.03
0.230
DIA.
0.37
0.51
0.045
0.060
0.195
0.175
0.209
1
DIA.
LS XXX
YYWW
0.170
0.195
1.78
2.05
2.80
3.04
0.030
MAX.
3
0.150
0.115
2
4 LEADS
0.500 MIN.
0.050
1.20
1.40
2.10
2.64
0.019
0.016
DIA.
0.014
0.020
0.016
0.022
0.89
1.12
0.500
0.610
0.100
0.085
0.180
2
4
1
3
1
2
3
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
45°
0.095
0.105
0.045
0.055
DIMENSIONS
IN INCHES.
0.046
0.036
0.048
0.028
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Not production tested, guaranteed by design.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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